Electrical Properties of The Heterojunction Diode Produced Based on IGZO Thin Film

In this study, IGZO thin films were deposited on SLG and p-Si wafer at room temperature, under oxygen gas pressure of 5×10-2 7×10-2 mbar, using PLD technique these annealed 300oC temperature. grown in amorphous structure. As the was increased, particle size increased. IGZO/p-Si heterojunction diode produced based film that mbar not annealed, J-V curves darkness illumination condition obtained then its ideality factor barrier height calculated. an condition, n,〖 R〗_s Ф_b values IGZO/Si calculated by conventional J-V, Cheung Norde methods. Results work have been interpreted as well concluded to be close each other.